Fatimah A. Noor, Fandi Oktasendra, Euis Sustini, Khairurrijal Khairurrijal
The insulator layer and the substrate material play an important role in determining the performance of metal-insulator-semiconductor type solar cells. Here, the effects of insulator layer thickness and substrate doping density on the efficiency of a ZnO/SiO2/n-Si solar cell were studied. Semi-analytical calculations wer performed to obtain the current–voltage dark current, efficiency, and current–voltage characteristics of the cell. An efficiency of 20% was obtained with an insulating layer thickness of around 19 Å. It was also found that the efficiency started to decrease when an insulator layer thicknesses greater than the optimum thickness was used. Furthermore, the efficiency of the cells decreased with increasing substrate doping density, and the maximum efficiency was obtained with a substrate doping density of 6 × 1022 m−3. By optimizing the insulating layer thickness and substrate doping density an efficiency of 20% was achieved at a cell thickness of 25 μm. © 2018, © 2018 Informa UK Limited, trading as Taylor & Francis Group.
Physics of Electronic Materials Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung, Indonesia; Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Padang, Padang, Indonesia
