Ramli, Ambran Hartono, Edi Sanjaya, Ahmad Aminudin, Khairurrijal, Freddy Haryanto, Cuk Imawan, Mitra Djamal
This paper reports the results of a study relating to the synthesis of a novel ternary CoFe2O4/CuO/CoFe2O4 thin film as a giant magnetoresistance (GMR) sensor. The CoFe2O4/CuO/CoFe2O4 thin film was prepared onto silicon substrate via DC magnetron sputtering with the targets facing each other. X-ray diffraction was used to determine the structure of the thin film and a 4-point method was used to measure the MR ratio. The GMR ratio is highly dependent on the ferrimagnetic (CoFe2O4) and nonmagnetic (CuO) layer thickness. The maximum GMR ratio at room temperature obtained in the CoFe2O4/CuO/CoFe2O4 thin film was 70% when the CoFe2O4 and the CuO layer had a thickness of 62.5 nm and 14.4 nm respectively. © 2016 Published by ITB Journal Publisher.
Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Padang, Jalan Prof. Hamka, Padang, 25131, Indonesia; Department of Physics, Universitas Islam Negeri Syarif Hidayatullah Jakarta, Jalan Ir. H. Juanda 95, Ciputat, 15412, Banten, Indonesia; Department of Physics Education, Faculty of Mathematics and Natural Sciences Universitas Pendidikan Indonesia, Jalan Dr. Setiabudi 229, Bandung, 40154, Indonesia; Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesha 10, Bandung, 40132, Indonesia; Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Indonesia, Kampus UI Depok, Jawa Barat, 16424, Indonesia; Department of Physics, Institut Teknologi Sumatera, Jalan Terusan Jenderal Ryacudu, Lampung Selatan, 35365, Indonesia
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