Development of a new giant magnetoresistance material based on organic material

Mitra Djamal; Ramli; Sparisoma Viridi; Khairurrijal

doi:10.1109/ICICI-BME.2011.6108661

Development of a new giant magnetoresistance material based on organic material

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Mitra Djamal, Ramli, Sparisoma Viridi, Khairurrijal

2011 Proceedings - International Conference on Instrumentation, Communication, Information Technology and Biomedical Engineering 2011, ICICI-BME 2011 Conference paper Cited by 1

Abstract

Giant magnetoresistance (GMR) material has great potential as next generation magnetic field sensing devices, have magnetic properties and high electrical potential to be developed into various applications such as: magnetic field sensor measurements, current measurements, linear and rotational position sensor, data storage, head recording, and non-volatile magnetic random access memory (MRAM). Today, the new GMR materials based on organic material obtained after allowing for Organic Magnetoresistance (OMAR) was found in OLEDs (organic light-emitting diodes). This organic material is used as a spacer layer in GMR devices with spin-valve structures. Traditionally, metals and semiconductors are used as a spacer layer in spin-valve. However, several factors such as spin scattering caused by large atoms of the spacer material and the interface scattering of ferromagnetic with a spacer, will limit the efficiency of spin-valve. In this paper, we describe a new GMR materials based on organic material in form of NiCoFe/Alq3/NiCoFe that we have developed in our laboratory. © 2011 IEEE.

Affiliations

Department of Physics, Institut Teknologi Bandung, Bandung, Indonesia; Department of Physics, Universitas Negeri Padang, Padang, Indonesia

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