Mitra Djamal, Ramli, Sparisoma Viridi, Khairurrijal
Giant magnetoresistance (GMR) material has great potential as next generation magnetic field sensing devices, have magnetic properties and high electrical potential to be developed into various applications such as: magnetic field sensor measurements, current measurements, linear and rotational position sensor, data storage, head recording, and non-volatile magnetic random access memory (MRAM). Today, the new GMR materials based on organic material obtained after allowing for Organic Magnetoresistance (OMAR) was found in OLEDs (organic light-emitting diodes). This organic material is used as a spacer layer in GMR devices with spin-valve structures. Traditionally, metals and semiconductors are used as a spacer layer in spin-valve. However, several factors such as spin scattering caused by large atoms of the spacer material and the interface scattering of ferromagnetic with a spacer, will limit the efficiency of spin-valve. In this paper, we describe a new GMR materials based on organic material in form of NiCoFe/Alq3/NiCoFe that we have developed in our laboratory. © 2011 IEEE.
Department of Physics, Institut Teknologi Bandung, Bandung, Indonesia; Department of Physics, Universitas Negeri Padang, Padang, Indonesia
